Coating composition for forming highly dielectric film and highly dielectric film
US8576540B2 · kind B2 · utility
1Cited by
0References
10Claims
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Key dates
| Filing date | Mar 17, 2009 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Aug 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/206
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a nonporous highly dielectric film which can improve withstanding voltage, insulating property and dielectric constant, especially can decrease a dielectric loss at high temperatures and can be made thin, and a coating composition for forming the highly dielectric film comprising (A) a vinylidene fluoride resin, (B) a cellulose resin and (C) a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.