Patent · US Active

Memory with regulated ground nodes

US8576611B2 · kind B2 · utility

5Cited by
3References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 8, 2010
Grant dateNov 5, 2013
Priority date
Expiry dateJun 23, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B10/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Some embodiments regard a memory array comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; wherein a column of the plurality of columns includes a column ground node; at least two voltage sources configured to be selectively coupled to the column ground node; and a plurality of memory cells having a plurality of internal ground nodes electrically coupled together and to the column ground node.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.