Magnetic random access memory devices including multi-bit cells
US8576615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (“MRAM”) cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.