Patent · US Active

Non-volatile memory device and read method thereof

US8576622B2 · kind B2 · utility

23Cited by
1References
33Claims
0Family size

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Inventors

Key dates

Filing dateAug 30, 2011
Grant dateNov 5, 2013
Priority date
Expiry dateJan 2, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/26
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In one embodiment, the method for reading memory cells in an array of non-volatile memory cells includes reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.