1T smart write
US8576633B2 · kind B2 · utility
3Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Dec 6, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3445
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The threshold voltages of particular nonvolatile memory cells on a word line are selectively increased on a column by column (cell by cell) basis. A selective program is performed on some of the cells, and simultaneously a program inhibit on other of the cells, resulting in all of the cells having a threshold voltage that falls between a minimum acceptable value and a maximum acceptable value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.