Metal deposition using seed layers
US8580100B2 · kind B2 · utility
3Cited by
2References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D5/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.