Method for thin layer deposition
US8580355B2 · kind B2 · utility
16Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2009 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/328
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The subject of the invention is a process for obtaining a material comprising a substrate and at least one at least partially crystalline titanium-oxide-based thin film deposited on a first side of said substrate, said process comprising the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.