Patent · US Active

Method for thin layer deposition

US8580355B2 · kind B2 · utility

16Cited by
1References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 10, 2009
Grant dateNov 12, 2013
Priority date
Expiry dateDec 15, 2029

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC03C2218/328
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The subject of the invention is a process for obtaining a material comprising a substrate and at least one at least partially crystalline titanium-oxide-based thin film deposited on a first side of said substrate, said process comprising the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.