Making of a microelectronic device including a monocrystalline silicon NEMS component and a transistor the gate of which is made in the same layer as the mobile structure of this component
US8580597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2010 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Mar 26, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.