Bypass diode for a solar cell
US8580599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.