Method for manufacturing semiconductor device
US8580649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | May 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for manufacturing a semiconductor device, which provides an isolation region in which a dense silicon oxide film is formed in a trench that requires high aspect ratio. The method includes forming an isolation trench using, as an etching mask, a nitride mask film formed on a substrate, forming a liner nitride film in the isolation trench, depositing a flowable silazane compound by a CVD method such that the height of the flowable silazane compound is higher than the upper surface of the nitride mask film from the upper portion of the trench, performing heat treatment under an oxidizing atmosphere to convert the flowable silazane compound film into a silicon oxide film and simultaneously densifying therefore, and planarizing the silicon oxide film to the height of the upper surface of the nitride mask film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.