Methods for fabricating graphene device topography and devices formed therefrom
US8580658B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2013 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming graphite-based structures, in which a substrate is patterned to form a plurality of elements on the substrate, are provided. A trench separates a first element from an adjacent element in the plurality. The surface of the first element and the surface of the trench (i) are respectively characterized by different first and second elevations and (ii) are separated by a side wall of the first element. Orthogonal projections of the surface of the first element and the surface of the trench onto a common plane are contiguous or overlapping. In the method, a first graphene layer on the entire first surface and a second graphene layer on the entire second surface are concurrently generated. The second graphene layer has a thickness that is less than a difference between the first and second elevations. Thus, a graphite-based structure having isolated first and second graphene layers is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.