Copper interconnection structure and method for forming copper interconnections
US8580688B2 · kind B2 · utility
5Cited by
1References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 12, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Sep 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.