Phase change memory device comprising bismuth-tellurium nanowires
US8581222B2 · kind B2 · utility
6Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared by using a porous nano template without any high temperature process and said nanowires may be used in the phase change memory device by using their phase change characteristics to identify memory characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.