Semiconductor body and method of producing a semiconductor body
US8581264B2 · kind B2 · utility
4Cited by
1References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 28, 2009 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jan 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.