Integrated semiconductor light-emitting device and its manufacturing method
US8581274B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2007 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/14
Abstract
An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.