Optoelectronic semiconductor chip

US8581280B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Fehrer · Bad Abbach, DE
• Uwe Strauss · Bad Abbach, DE

Key dates

• Filing date: Dec 20, 2006
• Grant date: Nov 12, 2013
• Expiry date: Dec 20, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

An optoelectronic semiconductor chip (1) having a semiconductor layer sequence (2), which comprises an active region (3) suitable for generating radiation and has a lateral main extension direction. The semiconductor layer sequence is arranged by a substrate (4) having a side surface (17), the side surface has a side surface region (18) that is beveled with respect to the main extension direction, and/or a cutout (21), and the semiconductor chip has a radiation-transmissive and electrically conductive contact layer (5).