Semiconductor light emitting component
US8581289B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.