Semiconductor device
US8581299B2 · kind B2 · utility
2Cited by
0References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
In a semiconductor device, at least one of the ratio (collector contact area/collector active area) in the High Side IGBT and the ratio (contact area on p+ region/p+ region area) is higher than the ratio in the Low Side IGBT. Thus, it is possible to develop without substantial changes and reduce the development burden.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.