Semiconductor device and method of manufacturing the same
US8581316B2 · kind B2 · utility
3Cited by
11References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
Provided is a semiconductor device including, on the same semiconductor substrate, a transistor element, a capacitor, and a resistor. The capacitor is formed on an active region, and the resistor is formed on an element isolation region, both formed of the same polysilicon film. By CMP or etch-back, the surface is ground down while planarizing the surface until a resistor has a desired thickness. Owing to a difference in height between the active region and the element isolation region, a thin resistor and a thick upper electrode of the capacitor are formed to prevent passing through of a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.