Laterally diffused metal oxide semiconductor transistors

US8581344B2 · kind B2 · utility

Assignee

• VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION · TW

Inventor

• Ya-Sheng Liu · Taipei, TW

Key dates

• Filing date: Apr 6, 2007
• Grant date: Nov 12, 2013
• Expiry date: Nov 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A laterally diffused metal oxide semiconductor transistor. The laterally diffused metal oxide semiconductor transistor includes a substrate, a drain formed thereon, a source formed on the substrate, comprising a plurality of individual sub-sources respectively corresponding to various sides of the drain, a plurality of channels formed in the substrate between the sub-sources and the drain, a gate overlying a portion of the sub-sources and the channels, and a drift layer formed in the substrate underneath the drain.