Semiconductor memory device
US8581346B2 · kind B2 · utility
0Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2010 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the second conductive line intersects with the first conductive line and electrically connected to the first conductive line and the second conductive line and a mechanical switch disposed between the resistance variation part and the second conductive line. The mechanical switch includes a nanotube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.