Resistance memory devices and methods of forming the same
US8581364B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 8, 2010 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Provided are resistance memory devices and methods of forming the same. The resistance memory devices include a first electrode and a second electrode on a substrate, a transition metal oxide layer interposed between the first electrode and the second electrode, an electrolyte layer interposed between the second electrode and the transition metal oxide layer, and conductive bridges having one end that is electrically connected to the second electrode on the electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.