Method and system for forming conductive bumping with copper interconnection
US8581366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making an integrated circuit system with one or more copper interconnects that are conductively connected with a substrate includes depositing and patterning a first dielectric layer to form a first via and filling the first via through the first dielectric layer with a copper material. The method further includes depositing and patterning a second dielectric layer in contact with the first dielectric layer to form a second via, and forming a diffusion barrier layer. Moreover, the method includes depositing and patterning a photoresist layer on the diffusion barrier layer, and at least partially filling the second via with a metal material. The metal material is conductively connected to the copper material through the diffusion barrier layer. The method further includes removing the photoresist and the diffusion barrier layer not covering by the metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.