Patent · US Active

Semiconductor device and method of manufacturing the same

US8581410B2 · kind B2 · utility

1Cited by

25References

7Claims

0Family size

Assignee

RENESAS ELECTRONICS CORPORATION · JP

Inventors

Eiji Hayashi · Tokyo, JP
Kyo Go · Tokyo, JP
Kozo Harada · Tokyo, JP
Shinji Baba · Tokyo, JP

Key dates

Filing date	Apr 15, 2013
Grant date	Nov 12, 2013
Priority date	—
Expiry date	Apr 15, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/029
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.