Information recording/reproducing device
US8581424B2 · kind B2 · utility
5Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.