Patent · US Active

Semiconductor device

US8581622B1 · kind B1 · utility

2Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 16, 2012
Grant dateNov 12, 2013
Priority date
Expiry dateMay 16, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/1084
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.