High-side driver circuit
US8581638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.