Patent · US Active

Double biasing for trilayer MR sensors

US8582250B2 · kind B2 · utility

6Cited by

25References

17Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Jiaoming Qiu · Maple Grove, US
Yonghua Chen · Bloomington, US
Kaizhong Gao · North Oaks, US

Key dates

Filing date	Dec 4, 2009
Grant date	Nov 12, 2013
Priority date	—
Expiry date	Sep 15, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/093
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A trilayer magnetoresistive sensor has at least first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.