Authenticating ferroelectric random access memory (F-RAM) device and method
US8583942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jan 22, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F21/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An F-RAM authenticating memory device and method providing secure mutual authentication between a Host system and a memory in order to gain read/write access to the F-RAM user memory contents. The device and technique of the present invention uses an Advanced Encryption Standard AES128 encryption module in conjunction with a true hardware random number generator and basic exclusive OR (XOR) functions in order to achieve a secure algorithm with a relatively small amount of processing. Due to inherently faster write times than that of conventional floating gate non-volatile memory technologies, the use of F-RAM significantly reduces the time available to interfere with a critical security parameter (CSP) update. Moreover, unlike floating gate technologies, F-RAM's read vs. write current signature is balanced making it less prone to side channel attacks while also providing relatively faster erase times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.