Method of etching a silicon-based material
US8585918B2 · kind B2 · utility
18Cited by
41References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2007 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the alcohol provides a greater packing density of the silicon columns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.