Method for producing perovskite-structure oxide
US8586150B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/72
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a method for producing a perovskite-structure oxide, with which a highly crystalline oxide layer is formed on a base layer that is metal or the like. The method comprises the steps of: forming, on a base layer, a buffer layer having thermal conductivity lower than thermal conductivity of the base layer; forming a precursor layer of an ABO3-type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer; decomposing the precursor layer, thereby forming an oxide layer comprising Ba and Ti; and annealing the oxide layer by irradiating laser light thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.