Process for the preparation of photoluminescent nanostructured silicon thin films using radio frequency plasma discharge
US8586151B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | May 22, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.