Ferromagnetic laminated structure and manufacturing method thereof
US8586216B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Dec 13, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Apr 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/268
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG. 2(A) shows Si (100) plane, FIG. 2(B) MgO (100) plane, and FIG. 2(C) the state of these two planes being lattice-matched. Si (100) plane in FIG. 2(A) is constituted by Si atoms 111 alone, while MgO (100) plane in FIG. 2(B) is constituted by Mg atoms 121 and oxygen (O) atoms 122. MgO (100) plane is grown on Si (100) plane, and as shown in FIG. 2(C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.