Film forming method and film forming apparatus
US8586484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Feb 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.