Hybrid anode for semiconductor radiation detectors
US8586936B2 · kind B2 · utility
2Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/301
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.