Patent · US Active

Resistive changing device

US8586961B2 · kind B2 · utility

2Cited by
2References
37Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 11, 2009
Grant dateNov 19, 2013
Priority date
Expiry dateJun 28, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8828
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A device that incorporates teachings of the present disclosure may include, for example, a memory array having a first array of nanotubes, a second array of nanotubes, and a resistive change material located between the first and second array of nanotubes. Other embodiments are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.