Patent · US Active

LED structure having embedded zener diode

US8587018B2 · kind B2 · utility

9Cited by
1References
19Claims
0Family size

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Inventors

Key dates

Filing dateJun 24, 2011
Grant dateNov 19, 2013
Priority date
Expiry dateMay 14, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/00

Abstract

A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.