LED structure having embedded zener diode
US8587018B2 · kind B2 · utility
9Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | May 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/00
Abstract
A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.