Semiconductor memory
US8587050B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/06
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In one embodiment, there is provided a semiconductor memory that includes: a semiconductor substrate having a channel region; a first tunnel insulating film on the channel region; a first fine particle layer on the first tunnel insulating film, the first fine particle layer including first conductive fine particles; a second tunnel insulating film on the first fine particle layer; a second fine particle layer on the second tunnel insulating film, the second fine particle layer including second conductive fine particles; a third tunnel insulating film on the second fine particle layer; a third fine particle layer on the third tunnel insulating film, the third fine particle layer including third conductive fine particles. A mean particle diameter of the second conductive fine particles is larger than that of the first conductive fine particles and that of the third conductive fine particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.