Memory array including magnetic random access memory cells and oblique field lines
US8587079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.