Semiconductor device and manufacturing method of the same
US8587087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2010 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to improve characteristics of an IGBT, particularly, to reduce steady loss, turn-off time and turn-off loss, a thickness of a surface semiconductor layer is set to about 20 nm to 100 nm in an IGBT including: a base layer; a buried insulating film provided with an opening part; the surface semiconductor layer connected to the base layer below the opening part; a p type channel forming layer formed in the surface semiconductor layer; an n+ type source layer; a p+ type emitter layer; a gate electrode formed over the surface semiconductor layer via a gate insulating film; an n+ type buffer layer; and a p type collector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.