Semiconductor device including shielding layer and fabrication method thereof
US8587096B2 · kind B2 · utility
14Cited by
1References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Aug 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.