Patent · US Active

Wide band and radio frequency waveguide and hybrid integration in a silicon package

US8587106B2 · kind B2 · utility

3Cited by
1References
78Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 11, 2007
Grant dateNov 19, 2013
Priority date
Expiry dateJan 29, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.