Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating same
US8588001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory devices include a first NAND-type string of EEPROM cells having a first plurality of string selection transistors therein electrically connected in series within the string. This first plurality of string selection transistors includes a first plurality of depletion-mode transistors and a first enhancement-mode transistor. A second NAND-type string of EEPROM cells is provided with a second plurality of string selection transistors therein that are electrically connected in series. The second plurality of string selection transistors includes a second plurality of depletion-mode transistors and a second enhancement-mode transistor. The first enhancement-mode transistor is stacked vertically relative to one of the second plurality of depletion-mode transistors and the second enhancement-mode transistor is stacked vertically relative to one of the first plurality of depletion-mode transistors. A first string selection plug is configured to electrically connect gate electrodes of the first enhancement-mode transistor and one of the second plurality of depletion-mode transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.