Wavelength tunable semiconductor laser having two difractive grating areas
US8588266B2 · kind B2 · utility
9Cited by
9References
8Claims
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Key dates
| Filing date | Aug 7, 2006 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1246
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.