Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks
US8589320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/202
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A neuromorphic system includes a plurality of synapse blocks electrically connected to a plurality of neuron circuit blocks. The plurality of synapse blocks includes a plurality of neuromorphic circuits. Each neuromorphic circuit includes a field effect transistor in a diode configuration electrically connected to variable resistance material, where the variable resistance material provides a programmable resistance value. Each neuromorphic circuit also includes a first junction electrically connected to the variable resistance material and an output of one or more of the neuron circuit blocks, and a second junction electrically connected to the field effect transistor and an input of one or more of the neuron circuit blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.