Photoresist simulation
US8589827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2010 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Oct 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.