Polycrystalline diamond structure
US8590643B2 · kind B2 · utility
11Cited by
25References
31Claims
0Family size
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Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/25
- WIPO fieldCivil engineering
- WIPO sectorOther fields
Abstract
A PCD structure comprising a first region, in a state of residual compressive stress, and a second region in a state of residual tensile stress adjacent the first region; the first and second regions each formed of respective PCD grades and directly bonded to each other by intergrowth of diamond grains, the PCD grades having transverse rupture strength (TRS) of at least 1,200 MPa. A third region in a state of residual compressive stress may also be provided such that the second region is disposed between the first and third regions and is bonded to the first and third regions by intergrowth of diamond grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.