Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
US8591647B2 · kind B2 · utility
1Cited by
19References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 6, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jan 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.