Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface
US8591711B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.