Fabricating method of electron-emitting device
US8591984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A fabricating method of an electron-emitting device includes at least the following steps. A substrate having a first side and a second side is provided. The first side is opposite to the second side. A first electrode pattern layer is formed on the first side of the substrate. A conductive pattern layer is formed on the substrate and the first electrode pattern layer, and the conductive pattern layer partially covers the first electrode pattern layer. An electron-emitting region is formed in the conductive pattern layer. A second electrode pattern layer is formed on the second side of the substrate. The second electrode pattern layer partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.